Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory (2013)

First Author: Miranda E
Attributed to:  Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4836935

Publication URI: http://dx.doi.org/10.1063/1.4836935

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 22