Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions (2014)
Attributed to:
High permittivity dielectrics on Ge for end of Roadmap application
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ted.2014.2335053
Publication URI: http://dx.doi.org/10.1109/ted.2014.2335053
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Electron Devices
Issue: 9