Impurity bound-to-unbound terahertz sensors based on beryllium and silicon d-doped GaAs/AlAs multiple quantum wells (2008)

First Author: Seliuta D
Attributed to:  THz electro-optics of nitride semiconductors: a feasibility study funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2839585

Publication URI: http://dx.doi.org/10.1063/1.2839585

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 5