📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Nonresonant hydrogen dopants in In(AsN): A route to high electron concentrations and mobilities (2013)

First Author: Kozlova N

Attributed to: InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1103/physrevb.87.165207

Publication URI: http://dx.doi.org/10.1103/physrevb.87.165207

Type: Journal Article/Review

Parent Publication: Physical Review B

Issue: 16