The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes (2006)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2165405
Publication URI: http://dx.doi.org/10.1063/1.2165405
Type: Journal Article/Review
Parent Publication: Journal of Applied Physics
Issue: 2