The 310-340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer (2008)

First Author: Wang T
Attributed to:  Fabrication of first 337 nm laser diodes for biological applications funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/41/9/094003

Publication URI: http://dx.doi.org/10.1088/0022-3727/41/9/094003

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 9