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Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer (2008)

First Author: Airey R

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0022-3727/41/9/094004

Publication URI: http://dx.doi.org/10.1088/0022-3727/41/9/094004

Type: Journal Article/Review

Parent Publication: Journal of Physics D: Applied Physics

Issue: 9