MOCVD growth and optical study of InGaN quantum dots and their emitters on a high quality GaN layer grown using a high temperature AlN as buffer (2009)

First Author: Wang Q

Attributed to: Growth, fabrication and physical properties of nitride quantum dot based optical devices: light emitting diodes, laser diodes and photodetectors funded by EPSRC

No abstract provided

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: S2