Influence of annealing temperature on optical properties of InGaN quantum dot based light emitting diodes (2008)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2976324
Publication URI: http://dx.doi.org/10.1063/1.2976324
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 8