📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer (2006)

First Author: Wang T

Attributed to: Growth, fabrication and physical properties of nitride quantum dot based optical devices: light emitting diodes, laser diodes and photodetectors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2338784

Publication URI: http://dx.doi.org/10.1063/1.2338784

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 8