Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer (2006)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2338784
Publication URI: http://dx.doi.org/10.1063/1.2338784
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 8