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Excitonic spin lifetimes in InGaN quantum wells and epilayers (2008)

First Author: Brown J

Attributed to: Growth, fabrication and physical properties of nitride quantum dot based optical devices: light emitting diodes, laser diodes and photodetectors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2976344

Publication URI: http://dx.doi.org/10.1063/1.2976344

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 5