Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire (2009)
Attributed to:
Fabrication of first 337 nm laser diodes for biological applications
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3253416
Publication URI: http://dx.doi.org/10.1063/1.3253416
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 16