Enhanced internal quantum efficiency of an InGaN/GaN quantum well as a function of silver thickness due to surface plasmon coupling (2011)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201001031
Publication URI: http://dx.doi.org/10.1002/pssc.201001031
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 7-8