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Enhanced internal quantum efficiency of an InGaN/GaN quantum well as a function of silver thickness due to surface plasmon coupling (2011)

First Author: Renwick P

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201001031

Publication URI: http://dx.doi.org/10.1002/pssc.201001031

Type: Journal Article/Review

Parent Publication: physica status solidi c

Issue: 7-8