Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEM (2012)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/1742-6596/371/1/012014
Publication URI: http://dx.doi.org/10.1088/1742-6596/371/1/012014
Type: Journal Article/Review
Parent Publication: Journal of Physics: Conference Series