Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM (2012)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201100500
Publication URI: http://dx.doi.org/10.1002/pssc.201100500
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 3-4