Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision (2012)
Abstract
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Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1007/s10853-012-6822-3
Publication URI: http://dx.doi.org/10.1007/s10853-012-6822-3
Type: Journal Article/Review
Parent Publication: Journal of Materials Science
Issue: 7