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Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface (2006)

First Author: Hamilton J

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.2240257

Publication URI: http://dx.doi.org/10.1063/1.2240257

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 4