Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si/SiO2 interface (2006)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2240257
Publication URI: http://dx.doi.org/10.1063/1.2240257
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 4