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Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction (2006)

First Author: Hamilton J

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.2140004

Publication URI: http://dx.doi.org/10.1116/1.2140004

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Issue: 1