Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction (2006)

First Author: Hamilton J
Attributed to:  University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1116/1.2140004

Publication URI: http://dx.doi.org/10.1116/1.2140004

Type: Journal Article/Review

Parent Publication: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Issue: 1