Effect of buried Si/SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junction (2006)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/1.2140004
Publication URI: http://dx.doi.org/10.1116/1.2140004
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Issue: 1