Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink (2007)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.2778749
Publication URI: http://dx.doi.org/10.1063/1.2778749
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 9