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Excitation and pressure effects on photoluminescence from dislocation engineered silicon material (2006)

First Author: Ishibashi Y

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssb.200672525

Publication URI: http://dx.doi.org/10.1002/pssb.200672525

Type: Journal Article/Review

Parent Publication: physica status solidi (b)

Issue: 1