Excitation and pressure effects on photoluminescence from dislocation engineered silicon material (2006)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssb.200672525
Publication URI: http://dx.doi.org/10.1002/pssb.200672525
Type: Journal Article/Review
Parent Publication: physica status solidi (b)
Issue: 1