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Annealing and deposition temperature dependence of the bandgap of amorphous FeSi 2 fabricated by co-sputter deposition (2008)

First Author: Wong L

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/23/3/035007

Publication URI: http://dx.doi.org/10.1088/0268-1242/23/3/035007

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 3