Annealing and deposition temperature dependence of the bandgap of amorphous FeSi 2 fabricated by co-sputter deposition (2008)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/23/3/035007
Publication URI: http://dx.doi.org/10.1088/0268-1242/23/3/035007
Type: Journal Article/Review
Parent Publication: Semiconductor Science and Technology
Issue: 3