Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant (2008)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/1.2816936
Publication URI: http://dx.doi.org/10.1116/1.2816936
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Issue: 1