Enhancement of phosphorus activation in vacancy engineered thin silicon-on-insulator substrates (2009)

First Author: Smith A

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3262527

Publication URI: http://dx.doi.org/10.1063/1.3262527

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 10