Model for electron mobility as a function of carrier concentration and strain in heavily doped strained silicon (2009)

First Author: Bennett N

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3159821

Publication URI: http://dx.doi.org/10.1063/1.3159821

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 25