Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment (2010)
Attributed to:
University of Surrey Ion Beam Centre
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1116/1.3242637
Publication URI: http://dx.doi.org/10.1116/1.3242637
Type: Journal Article/Review
Parent Publication: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Issue: 1