Influence of implantation conditions of He + ions on the structure of a damaged layer in GaAs(001) (2011)

First Author: Shcherbachev K

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssa.201184259

Publication URI: http://dx.doi.org/10.1002/pssa.201184259

Type: Journal Article/Review

Parent Publication: physica status solidi (a)

Issue: 11