On Fabrication of High Concentration Mn Doped Si by Ion Implantation: Problem and Challenge (2012)

First Author: Peng N

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1016/j.phpro.2012.03.577

Publication URI: http://dx.doi.org/10.1016/j.phpro.2012.03.577

Type: Journal Article/Review

Parent Publication: Physics Procedia