Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon (2014)

First Author: Marqués L

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4871538

Publication URI: http://dx.doi.org/10.1063/1.4871538

Type: Journal Article/Review

Parent Publication: Journal of Applied Physics

Issue: 14