Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire (2012)

First Author: Gonzalez-Zalba M

Attributed to: University of Surrey Ion Beam Centre funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.4750251

Publication URI: http://dx.doi.org/10.1063/1.4750251

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 10