📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations (2012)

First Author: Aldegunde M

Attributed to: Quantum Simulations of Future Solid State Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/led.2011.2177634

Publication URI: http://dx.doi.org/10.1109/led.2011.2177634

Type: Journal Article/Review

Parent Publication: IEEE Electron Device Letters

Issue: 2