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Simulation Study of Performance for a 20-nm Gate Length In$_{\bf 0.53}$Ga$_{\bf 0.47}$As Implant Free Quantum Well MOSFET (2012)

First Author: Benbakhti B

Attributed to: Quantum Simulations of Future Solid State Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/tnano.2012.2199514

Publication URI: http://dx.doi.org/10.1109/tnano.2012.2199514

Type: Journal Article/Review

Parent Publication: IEEE Transactions on Nanotechnology

Issue: 4