Confinement, overflow, and emission of holes on SiGe surface with Ge dots: Heterogeneous hole redistribution and its application to virtual dot manipulation (2009)
Attributed to:
Semiconductor Research at the Materials-Device Interface
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1063/1.3220065
Publication URI: http://dx.doi.org/10.1063/1.3220065
Type: Journal Article/Review
Parent Publication: Applied Physics Letters
Issue: 9
ISSN: 0003-6951