Confinement, overflow, and emission of holes on SiGe surface with Ge dots: Heterogeneous hole redistribution and its application to virtual dot manipulation (2009)

First Author: Ishii M
Attributed to:  Semiconductor Research at the Materials-Device Interface funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1063/1.3220065

Publication URI: http://dx.doi.org/10.1063/1.3220065

Type: Journal Article/Review

Parent Publication: Applied Physics Letters

Issue: 9

ISSN: 0003-6951