The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells (2014)
Attributed to:
Materials Challenges in GaN-based Light Emitting Structures
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201300452
Publication URI: http://dx.doi.org/10.1002/pssc.201300452
Type: Journal Article/Review
Parent Publication: physica status solidi c
Issue: 3-4