The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells (2014)

First Author: Davies M
Attributed to:  Nitrides for the 21st century funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/pssc.201300452

Publication URI: http://dx.doi.org/10.1002/pssc.201300452

Type: Journal Article/Review

Parent Publication: physica status solidi (c)

Issue: 3-4