GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer (2008)
Attributed to:
Advanced GaAs Based Laser Fabrication (Feasibility Study)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1049/el:20081236
Publication URI: http://dx.doi.org/10.1049/el:20081236
Type: Journal Article/Review
Parent Publication: Electronics Letters
Issue: 15