GaAs-based buried heterostructure laser incorporating an InGaP opto-electronic confinement layer (2008)
Attributed to:
Advanced GaAs Based Laser Fabrication (Feasibility Study)
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/cleo.2008.4552028
Publication URI: http://dx.doi.org/10.1109/cleo.2008.4552028
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-55752-859-9