📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy. (2014)

First Author: Sinthiptharakoon K

Attributed to: Support for the UKCP consortium funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0953-8984/26/1/012001

PubMed Identifier: 24304933

Publication URI: http://europepmc.org/abstract/MED/24304933

Type: Journal Article/Review

Volume: 26

Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal

Issue: 1

ISSN: 0953-8984