📣 Help Shape the Future of UKRI's Gateway to Research (GtR)

We're improving UKRI's Gateway to Research and are seeking your input! If you would be interested in being interviewed about the improvements we're making and to have your say about how we can make GtR more user-friendly, impactful, and effective for the Research and Innovation community, please email gateway@ukri.org.

Understanding the Role of the Low Temperature Seed Layer in the Growth of Low Defect Relaxed Germanium Layers on (111) Silicon by Reduced Pressure CVD (2012)

First Author: Nguyen V

Attributed to: Creating Silicon Based Platforms for New Technologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/istdm.2012.6222501

Publication URI: http://dx.doi.org/10.1109/istdm.2012.6222501

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4577-1864-9