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O 2 + probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si 0.4 Ge 0.6 /Ge quantum wells (2012)

First Author: Morris R

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/sia.4963

Publication URI: http://dx.doi.org/10.1002/sia.4963

Type: Journal Article/Review

Parent Publication: Surface and Interface Analysis

Issue: 1