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Coexistence of memory resistance and memory capacitance in TiO2 solid-state devices. (2014)

First Author: Salaoru I

Attributed to: Reliably unreliable nanotechnologies funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1186/1556-276x-9-552

PubMed Identifier: 25298759

Publication URI: http://europepmc.org/abstract/MED/25298759

Type: Journal Article/Review

Volume: 9

Parent Publication: Nanoscale research letters

Issue: 1

ISSN: 1556-276X