InGaAsN as absorber in APDs for 1.3 micron wavelength applications (2010)
Attributed to:
New high-performance avalanche photodiodes based on the unique properties of dilute nitrides
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/iciprm.2010.5516060
Publication URI: http://dx.doi.org/10.1109/iciprm.2010.5516060
Type: Conference/Paper/Proceeding/Abstract
ISBN: 978-1-4244-5919-3