Atomistic Origin of the Enhanced Crystallization Speed and n-Type Conductivity in Bi-doped Ge-Sb-Te Phase-Change Materials (2014)

First Author: Skelton J
Attributed to:  Modelling of Advanced Functional Materials using Terascale Computing funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1002/adfm.201401202

Publication URI: http://dx.doi.org/10.1002/adfm.201401202

Type: Journal Article/Review

Parent Publication: Advanced Functional Materials

Issue: 46