A first-principles study of As doping at a disordered Si-SiO2 interface. (2014)

First Author: Corsetti F
Attributed to:  Modelling of Advanced Functional Materials using Terascale Computing funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0953-8984/26/5/055002

PubMed Identifier: 24334566

Publication URI: http://europepmc.org/abstract/MED/24334566

Type: Journal Article/Review

Volume: 26

Parent Publication: Journal of physics. Condensed matter : an Institute of Physics journal

Issue: 5

ISSN: 0953-8984