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TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT (2012)

First Author: Faramehr S

Attributed to: Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1109/asdam.2012.6418566

Publication URI: http://dx.doi.org/10.1109/asdam.2012.6418566

Type: Conference/Paper/Proceeding/Abstract

ISBN: 978-1-4673-1197-7