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The Effect of Temperature in a thin Si Nanowire Transistor, with a Single Donor in the Channel, using Dissipative Physics (2013)

First Author: Martinez A

Attributed to: Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1557/opl.2013.639

Publication URI: http://dx.doi.org/10.1557/opl.2013.639

Type: Journal Article/Review

Parent Publication: MRS Proceedings