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Multi-scale simulations of a Mo/ n + -GaAs Schottky contact for nano-scale III-V MOSFETs (2014)

First Author: Aldegunde M

Attributed to: Multiscale Modelling of Metal-Semiconductor Contacts for the Next Generation of Nanoscale Transistors funded by EPSRC

Abstract

No abstract provided

Bibliographic Information

Digital Object Identifier: http://dx.doi.org/10.1088/0268-1242/29/5/054003

Publication URI: http://dx.doi.org/10.1088/0268-1242/29/5/054003

Type: Journal Article/Review

Parent Publication: Semiconductor Science and Technology

Issue: 5